WFP540 silicon n-channel mosfet features 33a,100v,r ds(on) (max0.044 ? )@v gs =10v ultra-low gate charge(typical 25nc) fast switching capab ility 100%avalanche tested isolation voltage (v iso =4000v ac) maximum junction temperature range(150 ) general description this power mosfet is produced using winsemi's advanced planar stripe, dmos technology. this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .this devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction. absolute maximum ratings symbol parameter value units v dss drain source voltage 100 v continuous drain current(@tc=25 ) 33* a i d continuous drain current(@tc=100 ) 23* a i dm drain current pulsed (note1) 132 * a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note2) 435 mj e ar repetitive avalanche energy (note1) 12.7 mj dv/dt peak diode recovery dv /dt (note3) 6.0 v/ ns total power dissipation(@tc=25 ) 127 w p d derating factor above 25 0.85 w/ t j ,t stg junction and storage temperature -40~150 t l channel temperature 300 *drain current limited by junction temperature thermal characteristics value symbol parameter min typ max units r qjc thermal resistance , junction -to -case - - 1.18 /w r qja thermal resistance , junction-to -ambient - - 62.5 /w w/t-f002-rev.a/0 sep.2012 copyright@winsemi microelectronics co., ltd., all right reserved.
WFP540 2/7 s t ead y , k e e p y ou advanc e electrical characteristics(tc=25 ) characteristics symbol test condition min type max unit gate leakage current i gss v gs =30v,v ds =0v - - 100 na gate-source breakdown voltage v (br)gss i g =10 a,v ds =0v 30 - - v v ds =100v,v gs =0v,tc=25 - - 1 a drain cut -off current i dss v ds =80v,tc=150 - - 10 a drain -source breakdown voltage v (br)dss i d =250 a,v gs =0v 100 - - v breakdown voltage temperature coefficient ? bv dss / ? t j i d =250 a, referenced to 25 - 0.11 - v/ gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 2 - 4 v drain -source on resistance r ds(on) v gs =10v,i d =16.5a - - 0.044 ? forward transconductance gfs v ds =40v,i d =16.5a - 22 - s input capacitance c iss - 1150 1500 reverse transfer capacitance c rss - 62 80 output capacitance c oss v ds =25v, v gs =0v, f=1mhz - 320 420 pf turn-on rise time tr - 195 400 turn-on time t d (on) - 15 40 turn-off fall time tf - 110 230 switching time turn-off time t d (off) v dd =50v, i d =33a r g =25 ? (note4,5) - 80 170 ns total gate charge(gate-source plus gate-drain) qg - 38 51 gate-source charge qgs - 7.5 - gate-drain("miller") charge qgd v dd =80v, v gs =10v, i d =33a (note4,5) - 18 - nc source-drain ratings and characteristics(ta=25 ) characteristics symbol test condition min type max unit continuous drain reverse current i dr - - - 33 a pulse drain reverse current i drp - - - 132 a forward voltage(diode) v dsf i dr =7.5a,v gs =0v - - 1.4 v reverse recovery time trr - 80 - ns reverse recovery charge qrr i dr =7.5a,v gs =0v, di dr / dt =100 a / s - 0.22 - c note 1.repeativity rating :pulse width limited by junction temperature 2.l=0.6mh i as =33a,v dd =25v,r g =25 ? ,starting t j =25 3.i sd 33.a,di/dt 300a/us,v dd WFP540 3/7 s t ead y , k e e p y ou advanc e typical characteristics
WFP540 4/7 s t ead y , k e e p y ou advanc e
WFP540 5/7 s t ead y , k e e p y ou advanc e to-220 package dimension unit:mm
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